Typical Characteristics
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
2.0
1.5
1.0
0.5
0.0
VGS = 10V
VGS = 20V
* Note : TJ = 25oC
0
5
10
15
20
25
30
35
ID, Drain Current[A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 120V
VDS = 300V
C
C
iss
VDS = 480V
Coss
6
∗ Note ;
1. VGS = 0 V
4
C
2. f = 1 MHz
rss
2
* Note : ID = 9.5A
0
10
0
-1
100
101
0
4
8
12
16
20
24
28
32
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Nov 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
