Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
VGS
--
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.0
--
4.0
0.8
V
RDS(ON) Static Drain-Source
On-Resistance
0.67
Ω
V
GS = 10 V, ID = 4.75 A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂
600
--
--
--
--
V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 ㎂, Referenced to 25℃
DS = 600 V, VGS = 0 V
0.7
V/℃
/ΔTJ
Coefficient
IDSS
--
--
--
--
1
㎂
㎂
V
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125℃
10
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
--
--
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
-100
Dynamic Characteristics
Ciss
Input Capacitance
--
--
--
1450 1885
㎊
㎊
㎊
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Coss
Crss
Output Capacitance
145
13
190
17
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Time
--
--
--
--
--
--
--
23
69
55
150
300
165
38
㎱
㎱
VDS = 300 V, ID = 9.5 A,
tr
td(off)
tf
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
RG = 25 Ω
144
77
㎱
(Note 4,5)
㎱
Qg
29
nC
nC
nC
VDS = 480V, ID = 9.5 A,
Qgs
Qgd
VGS = 10 V
6.8
10.3
--
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
--
--
--
--
--
--
--
9.5
38
1.4
--
A
ISM
VSD
trr
Source-Drain Diode Forward Voltage IS = 9.5 A, VGS = 0 V
--
V
Reverse Recovery Time
Reverse Recovery Charge
420
4.2
㎱
μC
IS = 9.5 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
Qrr
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=14.2mH, IAS=9.5A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤9.5A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Nov 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
