Nov 2007
BVDSS = 600 V
DS(on) typ = 0.67 Ω
R
HFP10N60S
600V N-Channel MOSFET
ID = 9.5 A
TO-220
FEATURES
q Originative New Design
1
2
3
q Superior Avalanche Rugged Technology
q Robust Gate Oxide Technology
q Very Low Intrinsic Capacitances
q Excellent Switching Characteristics
q Unrivalled Gate Charge : 29 nC (Typ.)
q Extended Safe Operating Area
q Lower RDS(ON) : 0.67 Ω (Typ.) @VGS=10V
q 100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
Drain Current
600
9.5
ID
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
5.7
A
IDM
VGS
EAS
IAR
Drain Current
– Pulsed
(Note 1)
38
A
Gate-Source Voltage
±30
700
9.5
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
15.6
4.5
mJ
V/ns
Power Dissipation (TC = 25℃)
- Derate above 25℃
156
1.25
W
W/℃
℃
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθCS
Junction-to-Case
Case-to-Sink
--
0.5
--
0.8
--
℃/W
Junction-to-Ambient
62.5
RθJA
◎ SEMIHOW REV.A0,Nov 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
