CF5073 series
ELECTRICAL CHARACTERISTICS
CF5073A×
V
= 3.0 to 3.6V, V = 1.65V, V = 0V, Ta = –40 to +85°C, unless otherwise noted.
C SS
DD
Rating
Typ
2.75
0.2
–
Parameter
Symbol
Conditions
Unit
Min
2.5
–
Max
–
HIGH-level output voltage
LOW-level output voltage
V
Q: Measurement circuit 1, I = 6mA
OH
V
OH
V
Q: Measurement circuit 1, I = 6mA
OL
0.4
10
10
–
V
OL
V
= V
–
ꢀA
ꢀA
V
OH
OL
DD
Q: Measurement circuit 6,
INHN = LOW
Output leakage current
I
Z
V
= V
–
–
SS
HIGH-level input voltage
LOW-level input voltage
V
INHN
INHN
0.7V
–
IH
DD
V
–
–
–
0.3V
V
IL
DD
CF5073A1
8
20
mA
mA
mA
mA
kΩ
kΩ
kΩ
kΩ
Measurement circuit 2, load
circuit 1, INHN = open,
C = 15pF,
CF5073A2
–
7.5
7
19.5
19.5
19
Current consumption
I
DD
L
CF5073A3
–
f = 16MHz
CF5073A4 to 6
–
7
INHN pull-up resistance
R
Measurement circuit 3
50
150
0.67
100
100
300
0.96
200
180
540
1.25
360
UP
R
f
Design value. A monitor pattern on a wafer is
tested.
R
D
Built-in resistance
R
Measurement circuit 4
B1
Design value. A monitor pattern on a wafer is
tested.
R
50
100
180
kΩ
B2
V
= 0.3V
= 3.0V
11.0
2.4
14.4
4.0
30
17.8
5.6
pF
pF
pF
pF
pF
C
C
Design value. A monitor
pattern on a wafer is tested.
C
V
V
Built-in capacitance
C
25.5
34
34.5
46
G
Design value. A monitor pattern on a wafer is
tested.
C
40
D
C
8.5
10
11.5
C
SEIKO NPC CORPORATION —5
SEIKO [ SEIKO EPSON CORPORATION ]
