CF5073 series
CF5073E×
V
DD
= 3.0 to 3.6V, V
C
= 1.65V, V
SS
= 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
Output leakage current
HIGH-level input voltage
LOW-level input voltage
Symbol
V
OH
V
OL
I
Z
V
IH
V
IL
Conditions
Min
Q: Measurement circuit 1, I
OH
= 6mA
Q: Measurement circuit 1, I
OL
= 6mA
Q: Measurement circuit 6,
INHN = LOW
INHN
INHN
CF5073E1
Current consumption
I
DD
Measurement circuit 2, load
circuit 1, INHN = open,
C
L
= 15pF,
f = 44MHz
Measurement circuit 3
Design value. A monitor pattern on a wafer is
tested.
Measurement circuit 4
Design value. A monitor pattern on a wafer is
tested.
Design value. A monitor
pattern on a wafer is tested.
V
C
= 0.3V
V
C
= 3.0V
CF5073E2
CF5073E3
CF5073E4 to 6
INHN pull-up resistance
R
UP
R
f
R
D
Built-in resistance
R
B1
R
B2
V
OH
= V
DD
V
OL
= V
SS
2.5
–
–
–
0.7V
DD
–
–
–
–
–
50
150
0.25
100
50
11.0
2.3
21.2
Design value. A monitor pattern on a wafer is
tested.
21.2
42.5
Typ
2.75
0.2
–
–
–
–
12
10.5
9.5
9
100
300
0.36
200
100
14.6
4.0
25
25
50
Max
–
0.4
10
10
–
0.3V
DD
28
26.5
25.5
25
180
540
0.47
360
180
18.2
5.7
28.8
28.8
57.5
V
V
µA
µA
V
V
mA
mA
mA
mA
kΩ
kΩ
kΩ
kΩ
kΩ
pF
pF
pF
pF
pF
Unit
C
V
Built-in capacitance
C
G
C
D
C
C
SEIKO NPC CORPORATION —9
SEIKO [ SEIKO EPSON CORPORATION ]
