2N7002T
Elektronische Bauelemente
115 mAMPS, 60VOLTS, RDS(on)=7.5
W
Small Signal MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
1
V
GS
= 5V
0.9
I
D
, DRAIN-SOURCE CURRENT (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
GS
= 5, 6, 7, 10V
V
GS
= 10,7,6V
V
GS
= 4V
2.2
R
DS(ON)
,
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3V
1.8
1.4
V
GS
= 4V
V
GS
= 3V
1
0
0
1
2
3
4
5
0.6
0
0.2
0.4
0.6
0.8
1.0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current
1.2
V
GS(th)
, NORMALIZED THRESHOLD VOLTAGE
2.2
R
DS(ON)
, NORMALIZED ON-RESISTANCE
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
1.1
V
GS
= 10V
I
D
= 500mA
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 3 Gate Threshold Variation with Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 4 On-Resistance Variation with Temperature
60
5.0
4.5
50
4.0
C, CAPACITANCE (pF)
40
3.5
3.0
30
2.5
2.0
I
D
= 50mA
20
C
iss
1.5
C
oss
10
1.0
0.5
C
rss
0
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
0.0
0
2
4
6
8
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 6 On-Resistance vs. Gate-Source Voltage
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 3
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