2N7002T
Elektronische Bauelemente
115 mAMPS, 60VOLTS, RDS(on)=7.5
W
Small Signal MOSFET
RoHS Compliant Product
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–523
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp
≤
50
µs)
Symbol
VDSS
VDGR
VGS
VGSM
Value
60
60
±20
±40
Unit
Vdc
Vdc
Vdc
Vpk
1
N–Channel
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
150
1.8
833
–55 to
+150
Unit
mW
mW/°C
°C/W
°C
2
3
1
2
2
R
θJA
TJ, Tstg
SOT–523
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
1
3
72
2
Gate
Source
SOT-523
Dim
A
B
C
D
G
H
J
K
L
S
V
Min
1.500
0.750
72 = Device Code
Max
1.700
0.850
0.900
0.300
1.100
0.100
0.200
0.300
0.600
1.750
0.350
D
H
K
J
C
V
1
3
2
A
L
0.600
0.150
0.900
0.000
0.100
0.100
0.400
1.450
0.250
B S
G
All Dimension in mm
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
