2N7002T
Elektronische Bauelemente
115 mAMPS, 60VOLTS, RDS(on)=7.5
W
Small Signal MOSFET
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10
µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = –20 Vdc)
TJ = 25°C
TJ = 125°C
V(BR)DSS
IDSS
IGSSF
IGSSR
60
–
–
–
–
–
–
–
–
–
–
1.0
500
10
–10
Vdc
µAdc
nAdc
nAdc
ON CHARACTERISTICS
(Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250
µAdc)
On–State Drain Current
(VDS
≥
2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)
TC = 25°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
Forward Transconductance
(VDS
=
10 V, ID = 200 mAdc)
VGS(th)
ID(on)
1.0
0.5
–
1
2.0
–
Vdc
A
Ohms
13.5
7.5
–
ms
R DS(on)
gFS
–
–
80
–
–
–
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
–
–
–
–
–
–
50
25
5.0
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID
^
200 mAdc,
25
500
RG = 25
Ω,
RL = 150
Ω,
Vgen = 10 V)
td(on)
td(off)
–
–
–
–
20
20
ns
ns
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
