2N3906
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
0.8
0.6
0.4
0.2
0
0.01
IC = 1.0 mA
10 mA
30 mA
100 mA
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Collector Saturation Region
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
q
V , TEMPERATURE COEFFICIENTS (mV/
°
C)
1.0
0.8
V, VOLTAGE (VOLTS)
0.6
0.4
0.2
0
1.0
0.5
0
-0.5
+25°C TO +125°C
-1.0
-1.5
-2.0
0
20
q
VB FOR VBE(sat)
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
180 200
-55°C TO +25°C
q
VC FOR VCE(sat)
+25°C TO +125°C
-55°C TO +25°C
VCE(sat) @ IC/IB = 10
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
100
200
“ON” Voltages
Temperature Coefficients
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
