2N3906
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
PNP Silicon
General Purpose Transistor
TO-92
COLLECTOR
3
FEATURES
2
BASE
1
EMITTER
.
Power Dissipation
P
CM
: 625 mW (Ta=25 )
1
2
3
.
Collector Current
I
CM
: -200 mA
.
Collector - Base Voltage
V
(BR)CBO
: -40 V
ELECTRICAL CHARACTERISTICS
(T
A
= 25
Parameter
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Transition Frequency
Operating and Storage Junction Temperature Range
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
T
J
, T
STG
unless otherwise specified)
Min.
-40
-40
-5
-
-
-
100
60
-
-
250
Typ.
-
-
-
-
-
-
-
-
-
-
-
-55 ~ +150
Max.
-
-
-
-0.1
-0.1
-0.1
400
-
0.3
-0.95
-
UNIT
V
V
V
µA
-
V
V
MHz
TEST CONDITIONS
I
C
= -1 mA, I
B
= 0 A
I
C
= -100 µA, I
E
= 0 A
I
E
= -100 µA, I
C
= 0 A
V
CB
= -40 V, I
E
= 0 A
V
CE
= -40 V, I
B
= 0 A
V
EB
= -5 V, I
C
= 0 A
V
CE
= -1 V, I
C
= -10 mA
V
CE
= -1 V, I
C
= -50 mA
I
C
= -50 mA, I
B
= -5 mA
I
C
= -50 mA, I
B
= -5 mA
V
CE
= -20 V, I
C
= -10 mA
f = 100 MHz
-
CLASSIFICATION OF h
FE(1)
Rank
Rang
O
100 ~ 200
Y
200 ~ 300
G
300 ~ 400
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
