2N3906
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
TYPICAL CHARACTERISTICS
3V
+9.1 V
< 1 ns
+0.5 V
10 k
CS < 4 pF*
300 ns
DUTY CYCLE = 2%
10 < t1 < 500
ms
DUTY CYCLE = 2%
t1
275
0
< 1 ns
3V
275
10 k
CS < 4 pF*
10.6 V
10.9 V
* Total shunt capacitance of test jig and connectors
Delay and Rise Time
Equivalent Test Circuit
Storage and Fall Time
Equivalent Test Circuit
h FE, DC CURRENT GAIN (NORMALIZED)
2.0
TJ = +125°C
+25°C
-55°C
VCE = 1.0 V
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
DC Current Gain
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 3
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