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M464S1724CT1-L1H/C1H 参数 Datasheet PDF下载

M464S1724CT1-L1H/C1H图片预览
型号: M464S1724CT1-L1H/C1H
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mx64 SDRAM SODIMM基于8Mx16,4Banks , 4K刷新, 3.3V同步DRAM与SPD [16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD]
分类和应用: 光电二极管动态存储器
文件页数/大小: 9 页 / 153 K
品牌: SAMSUNG [ SAMSUNG ]
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M464S1724CT1  
PC100 SODIMM  
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)  
REFER TO THE INDIVIDUAL COMPONENT, NOT THE WHOLE MODULE.  
-1H  
-1L  
Parameter  
Symbol  
Unit  
ns  
Note  
1
Min  
10  
Max  
Min  
10  
Max  
CAS latency=3  
CAS latency=2  
CAS latency=3  
CAS latency=2  
CAS latency=3  
CAS latency=2  
CLK cycle time  
tCC  
1000  
1000  
10  
12  
6
6
6
7
CLK to valid output delay  
Output data hold time  
tSAC  
ns  
1,2  
2
3
3
3
3
2
1
1
3
3
3
3
2
1
1
tOH  
ns  
CLK high pulse width  
CLK low pulse width  
Input setup time  
tCH  
tCL  
ns  
ns  
ns  
ns  
ns  
3
3
3
3
2
tSS  
tSH  
tSLZ  
Input hold time  
CLK to output in Low-Z  
CAS latency=3  
CAS latency=2  
6
6
6
7
CLK to output in Hi-Z  
tSHZ  
ns  
Notes :  
1. Parameters depend on programmed CAS latency.  
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.  
3. Assumed input rise and fall time (tr & tf) = 1ns.  
If tr & tf is longer than 1ns, transient time compensation should be considered,  
i.e., [(tr + tf)/2-1]ns should be added to the parameter.  
Rev. 0.0 April. 2000  
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