欢迎访问ic37.com |
会员登录 免费注册
发布采购

M464S1724CT1-L1H/C1H 参数 Datasheet PDF下载

M464S1724CT1-L1H/C1H图片预览
型号: M464S1724CT1-L1H/C1H
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mx64 SDRAM SODIMM基于8Mx16,4Banks , 4K刷新, 3.3V同步DRAM与SPD [16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD]
分类和应用: 光电二极管动态存储器
文件页数/大小: 9 页 / 153 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号M464S1724CT1-L1H/C1H的Datasheet PDF文件第1页浏览型号M464S1724CT1-L1H/C1H的Datasheet PDF文件第2页浏览型号M464S1724CT1-L1H/C1H的Datasheet PDF文件第3页浏览型号M464S1724CT1-L1H/C1H的Datasheet PDF文件第4页浏览型号M464S1724CT1-L1H/C1H的Datasheet PDF文件第5页浏览型号M464S1724CT1-L1H/C1H的Datasheet PDF文件第7页浏览型号M464S1724CT1-L1H/C1H的Datasheet PDF文件第8页浏览型号M464S1724CT1-L1H/C1H的Datasheet PDF文件第9页  
M464S1724CT1  
PC100 SODIMM  
AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)  
Parameter  
AC input levels (Vih/Vil)  
Value  
2.4/0.4  
1.4  
Unit  
V
Input timing measurement reference level  
Input rise and fall time  
V
tr/tf = 1/1  
1.4  
ns  
V
Output timing measurement reference level  
Output load condition  
See Fig. 2  
3.3V  
Vtt = 1.4V  
1200W  
50W  
VOH (DC) = 2.4V, IOH = -2mA  
VOL (DC) = 0.4V, IOL = 2mA  
Output  
Output  
Z0 = 50W  
50pF  
50pF  
870W  
(Fig. 1) DC output load circuit  
(Fig. 2) AC output load circuit  
OPERATING AC PARAMETER  
(AC operating conditions unless otherwise noted)  
Version  
Parameter  
Symbol  
Unit  
Note  
-1H  
20  
20  
20  
50  
-1L  
20  
20  
20  
50  
Row active to row active delay  
RAS to CAS delay  
tRRD(min)  
tRCD(min)  
tRP(min)  
ns  
ns  
1
1
1
1
Row precharge time  
ns  
tRAS(min)  
tRAS(max)  
tRC(min)  
ns  
Row active time  
100  
2
us  
Row cycle time  
70  
70  
ns  
1
2,5  
5
Last data in to row precharge  
Last data in to Active delay  
Last data in to new col. address delay  
Last data in to burst stop  
tRDL(min)  
tDAL(min)  
tCDL(min)  
tBDL(min)  
tCCD(min)  
CLK  
-
2 CLK + 20 ns  
1
1
1
2
1
CLK  
CLK  
CLK  
2
2
Col. address to col. address delay  
3
CAS latency=3  
CAS latency=2  
Number of valid output data  
ea  
4
Notes :  
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time  
and then rounding off to the next higher integer.  
2. Minimum delay is required to complete write.  
3. All parts allow every cycle column address change.  
4. In case of row precharge interrupt, auto precharge and read burst stop.  
5. For -1H/1L, tRDL=1CLK and tDAL=1CLK+20ns is also supported .  
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.  
Rev. 0.0 April. 2000  
 复制成功!