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KFG1216U2B-SIB6 参数 Datasheet PDF下载

KFG1216U2B-SIB6图片预览
型号: KFG1216U2B-SIB6
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 70ns, PBGA67]
分类和应用: 内存集成电路
文件页数/大小: 120 页 / 1551 K
品牌: SAMSUNG [ SAMSUNG ]
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OneNAND512Mb(KFG1216U2B-xIB6)  
FLASH MEMORY  
I/O Buffer Enable (IOBE)  
IOBE is the I/O Buffer Enable for the INT and RDY signals. At startup, INT and RDY outputs are High-Z. Bits 6 and 7 become valid  
after IOBE is set to "1". IOBE can be reset by a Cold Reset or by writing "0" to bit 5 of System Configuration1 Register.  
I/O Buffer Enable Information[5]  
Item  
Definition  
Description  
I/O Buffer Enable for INT and  
RDY signals  
0 = disable (default)  
1 = enable  
IOBE  
RDY Configuration (RDY conf)  
RDY Configuration Information[4]  
Item  
Definition  
Description  
RDY conf  
RDY configuration  
0=active one clock before valid data (Fixed)  
Write Mode (WM)  
WM  
Write Mode  
Asynchronous Write(default)  
0
Write Mode Information[1]  
Item  
Definition  
Description  
Selects between asynchronous Write Mode  
and synchronousWrite Mode  
WM  
Write Mode  
MRS(Mode Register Setting) Description  
RM  
0
WM  
0
Mode Description  
Asynch Read & Asynch Write (Default)  
1
0
Sync Read & Asynch Write  
Reserved 1)  
Other Cases  
Note)  
1. Operation not guaranteed for cases not defined in above table.  
Boot Buffer Write Protect Status(BWPS)  
Boot Buffer Write Protect Status Information[0]  
Item  
Definition  
Description  
0=locked(fixed)  
BWPS  
Boot Buffer Write Protect Status  
43  
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