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KFG1216U2B-SIB6 参数 Datasheet PDF下载

KFG1216U2B-SIB6图片预览
型号: KFG1216U2B-SIB6
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 70ns, PBGA67]
分类和应用: 内存集成电路
文件页数/大小: 120 页 / 1551 K
品牌: SAMSUNG [ SAMSUNG ]
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OneNAND512Mb(KFG1216U2B-xIB6)  
FLASH MEMORY  
2.6.2 External (BufferRAM) Memory Organization  
The on-chip external memory is comprised of 3 buffers used for Boot Code storage and data buffering.  
The BootRAM is a 1KB buffer that receives Boot Code from the internal memory and makes it available to the host at start up.  
There are two independent 2KB bi-directional data buffers, DataRAM0 and DataRAM1. These dual buffers enable the host to execute  
simultaneous Read-While load, and Write-While-program operations after Boot Up. During Boot Up, the BootRam is used by the host  
to initialize the main memory, and deliver boot code from NAND Flash core to host.  
Internal (Nand Array)  
Memory  
External (BufferRAM)  
Memory  
Boot code (1KB)  
BootRAM (1KB)  
Nand Array  
Host  
DataRAM0 (2KB)  
DataRAM1 (2KB)  
OTP Block  
The external memory is divided into a main area and a spare area. Each buffer is the equivalent size of a Sector.  
The main area data is 512B. The spare area data is 16B.  
External Memory Array Information  
Area  
BootRAM  
1KB+32B  
2
DataRAM0  
2KB+64B  
4
DataRAM1  
2KB+64B  
4
Total Size  
Number of Sectors  
Main  
Spare  
512B  
512B  
512B  
Sector  
16B  
16B  
16B  
14  
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