K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
Pointer Operation of K9K1216X0C(X16)
Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. ’00h’ command
sets the pointer to ’A’ area(0~255word), and ’50h’ command sets the pointer to ’B’ area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). ’00h’ or ’50h’ is sustained until another address pointer com-
mand is inputted. To program data starting from ’A’ or ’B’ area, ’00h’ or ’50h’ command must be inputted before ’80h’ command is writ-
ten. A complete read operation prior to ’80h’ command is not necessary.
Table 3. Destination of the pointer
Command
Pointer position
Area
"A" area
(00h plane)
"B" area
(50h plane)
00h
50h
0 ~ 255 word
256 ~ 263 word
main array(A)
spare array(B)
256 Word
8 Word
"A"
"B"
Internal
Page Register
Pointer select
command
(00h, 50h)
Pointer
Figure 5. Block Diagram of Pointer Operation
(1) Command input sequence for programming ’A’ area
The address pointer is set to ’A’ area(0~255), and sustained
Address / Data input
Address / Data input
80h 10h
00h
80h
10h
00h
’A’,’B’ area can be programmed.
’00h’ command can be omitted.
It depends on how many data are inputted.
(2) Command input sequence for programming ’B’ area
The address pointer is set to ’B’ area(256~263), and sustained
Address / Data input
Address / Data input
80h 10h
50h
80h
10h
50h
Only ’B’ area can be programmed.
’50h’ command can be omitted.
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SAMSUNG [ SAMSUNG ]
