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K9F1216U0A-DIB00 参数 Datasheet PDF下载

K9F1216U0A-DIB00图片预览
型号: K9F1216U0A-DIB00
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 30ns, PBGA63, TBGA-63]
分类和应用: 内存集成电路
文件页数/大小: 47 页 / 822 K
品牌: SAMSUNG [ SAMSUNG ]
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K9F1208Q0A K9F1216Q0A  
K9F1208D0A K9F1216D0A  
K9F1208U0A K9F1216U0A  
FLASH MEMORY  
Data Protection & Power-up sequence  
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector  
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.65V device), 2V(3.3V device). WP pin provides hard-  
ware protection and is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10ms is  
required before internal circuit gets ready for any command sequences as shown in Figure 24. The two step command sequence for  
program/erase provides additional software protection.  
Figure 24. AC Waveforms for Power Transition  
1.8V device : ~ 1.5V  
2.65V device : ~ 2.0V  
3.3V device : ~ 2.5V  
1.8V device : ~ 1.5V  
2.65V device : ~ 2.0V  
3.3V device : ~ 2.5V  
VCC  
High  
WP  
WE  
10ms  
46  
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