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K4H511638C-UCA2 参数 Datasheet PDF下载

K4H511638C-UCA2图片预览
型号: K4H511638C-UCA2
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB C-死DDR SDRAM规格 [512Mb C-die DDR SDRAM Specification]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 24 页 / 366 K
品牌: SAMSUNG [ SAMSUNG ]
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DDR SDRAM 512Mb C-die (x4, x8, x16)  
DDR SDRAM  
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins  
Specification  
Parameter  
DDR400  
TBD  
DDR333  
TBD  
DDR200/266  
1.2 V  
Maximum peak amplitude allowed for overshoot  
Maximum peak amplitude allowed for undershoot  
TBD  
TBD  
1.2 V  
The area between the overshoot signal and VDD must be less than or equal to  
The area between the undershoot signal and GND must be less than or equal to  
TBD  
TBD  
TBD  
TBD  
2.4 V-ns  
2.4 V-ns  
VDDQ  
Overshoot  
5
Maximum Amplitude = 1.2V  
4
3
2
Area = 2.4V-ns  
1
0
-1  
-2  
-3  
-4  
-5  
Maximum Amplitude = 1.2V  
GND  
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0  
Tims(ns)  
undershoot  
DQ/DM/DQS AC overshoot/Undershoot Definition  
Rev. 1.1 June. 2005  
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