K4E660411D, K4E640411D
DC AND OPERATING CHARACTERISTICS
(Continued)
Symbol
Power
Speed
K4E660411D
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
Don′t care
Normal
Don′t care
Don′t care
Normal
Don′t care
-50
-60
Don′t care
-50
-60
-50
-60
Don′t care
-50
-60
90
80
2
90
80
100
90
1
120
110
Max
K4E640411D
120
110
2
120
110
110
100
1
120
110
CMOS DRAM
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
CC1
* : Operating Current (RAS and CAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, CAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
