K4E660411D, K4E640411D
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN,
V
OUT
V
CC
Tstg
P
D
I
OS
Address
Rating
-1.0 to +7.0
-1.0 to +7.0
-55 to +150
1
50
CMOS DRAM
Units
V
V
°C
W
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.6
-1.0
*2
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+1.0
*1
0.7
Units
V
V
V
V
*1 : V
CC
+2.0V at pulse width≤20ns which is measured at V
CC
*2 : -2.0 at pulse width≤20ns which is measured at V
SS
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Input Leakage Current (Any input 0≤V
IN
≤V
CC
+0.5V,
all other pins not under test=0 Volt)
Output Leakage Current
(Data out is disabled, 0V≤V
OUT
≤V
CC
)
Output High Voltage Level(I
OH
=-5mA)
Output Low Voltage Level(I
OL
=4.2mA)
Symbol
I
I(L)
I
O(L)
V
OH
V
OL
Min
-5
-5
2.4
-
Max
5
5
-
0.4
Units
uA
uA
V
V
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
