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K4B2G0846D-HYH9 参数 Datasheet PDF下载

K4B2G0846D-HYH9图片预览
型号: K4B2G0846D-HYH9
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB D-死DDR3L SDRAM [2Gb D-die DDR3L SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 64 页 / 1744 K
品牌: SAMSUNG [ SAMSUNG ]
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Rev. 1.01  
K4B2G0446D  
K4B2G0846D  
datasheet  
DDR3L SDRAM  
8.3 AC & DC Logic Input Levels for Differential Signals  
8.3.1 Differential signals definition  
tDVAC  
VIH.DIFF.AC.MIN  
VIH.DIFF.MIN  
0.0  
half cycle  
VIL.DIFF.MAX  
VIL.DIFF.AC.MAX  
tDVAC  
time  
Figure 2. Definition of differential ac-swing and "time above ac level" tDVAC  
8.3.2 Differential swing requirement for clock (CK - CK) and strobe (DQS - DQS)  
[ Table 9 ] Differential AC & DC Input Levels  
DDR3-800/1066/1333/1600  
Symbol  
Parameter  
1.35V  
1.5V  
unit  
NOTE  
min  
+0.18  
max  
NOTE 3  
min  
+0.20  
max  
NOTE 3  
VIHdiff  
VILdiff  
differential input high  
differential input low  
V
V
V
V
1
1
2
2
NOTE 3  
-0.18  
NOTE 3  
-0.20  
V
IHdiff(AC)  
ILdiff(AC)  
2 x (VIH(AC) - VREF  
NOTE 3  
)
2 x (VIH(AC) - VREF  
NOTE 3  
)
differential input high ac  
differential input low ac  
NOTE 3  
NOTE 3  
V
2 x (VIL(AC) - VREF  
)
2 x (VIL(AC) - VREF)  
NOTE :  
1. Used to define a differential signal slew-rate.  
2. for CK - CK use V /V (AC) of ADD/CMD and V  
IH IL  
; for DQS - DQS use V /V (AC) of DQs and V  
; if a reduced ac-high or ac-low level is used for a signal group,  
REFCA  
IH IL  
REFDQ  
then the reduced level applies also here.  
3. These values are not defined, however they single-ended signals CK, CK, DQS, DQS need to be within the respective limits (V (DC) max, V (DC)min) for single-ended sig-  
IH  
IL  
nals as well as the limitations for overshoot and undershoot. Refer to "overshoot and Undersheet Specification"  
- 15 -  
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