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K4B2G0846D-HYH9 参数 Datasheet PDF下载

K4B2G0846D-HYH9图片预览
型号: K4B2G0846D-HYH9
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB D-死DDR3L SDRAM [2Gb D-die DDR3L SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 64 页 / 1744 K
品牌: SAMSUNG [ SAMSUNG ]
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Rev. 1.01  
K4B2G0446D  
K4B2G0846D  
datasheet  
DDR3L SDRAM  
8.4 Differential Input Cross Point Voltage  
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each cross point voltage of differential input  
signals (CK, CK and DQS, DQS) must meet the requirements in below table. The differential input cross point voltage VIX is measured from the actual  
cross point of true and complement signal to the mid level between of VDD and VSS  
.
VDD  
CK, DQS  
VIX  
VDD/2  
VIX  
VIX  
CK, DQS  
VSS  
Figure 4. VIX Definition  
[ Table 13 ] Cross point voltage for differential input signals (CK, DQS) : 1.35V  
DDR3L-800/1066/1333/1600  
Symbol  
Parameter  
Unit  
NOTE  
Min  
-150  
-150  
Max  
150  
150  
VIX  
VIX  
Differential Input Cross Point Voltage relative to VDD/2 for CK,CK  
Differential Input Cross Point Voltage relative to VDD/2 for DQS,DQS  
mV  
mV  
1
NOTE :  
1. The relationbetween Vix Min/Max and VSEL/VSEH should satisfy following.  
(VDD/2) + Vix(Min) - VSEL 25mV  
VSEH - ((VDD/2) + Vix(Max)) 25mV  
[ Table 14 ] Cross point voltage for differential input signals (CK, DQS) : 1.5V  
DDR3-800/1066/1333/1600  
Symbol  
Parameter  
Unit  
NOTE  
Min  
-150  
-175  
-150  
Max  
150  
175  
150  
mV  
mV  
mV  
VIX  
VIX  
Differential Input Cross Point Voltage relative to VDD/2 for CK,CK  
Differential Input Cross Point Voltage relative to VDD/2 for DQS,DQS  
1
NOTE :  
1. Extended range for V is only allowed for clock and if single-ended clock input signals CK and CK are monotonic, have a single-ended swing V  
/ V  
of at least V /2  
IX  
SEL  
SEH DD  
±250 mV, and the differential slew rate of CK-CK is larger than 3 V/ ns.  
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