STU/D9916L
1.3
1.15
1.10
1.05
V
DS=VGS
ID=250uA
1.2
I
D=250uA
1.1
1.0
0.9
1.00
0.95
0.90
0.85
0.8
0.7
0.6
-50 -25
0
25 50 75 100 125
-50 -25
0
25 50 75 100 125
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
18
20
10
15
12
9
6
3
1
T
J
=25 C
V
DS=10V
20
0
0
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
15
25
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
70
10
V
DS=15V
t
i
m
i
50
8
6
4
L
I
D=20A
1
)
0
N
m
s
1
O
0
(
RDS
s
0
m
1
s
1
D
10
C
V
GS=10V
2
0
1
Single Pulse
Tc=25 C
0.03
30
50
0.1
1
10
0
2
4
6
8
10 12 14 16
Qg, Total Gate Charge (nC)
V
DS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
Figure 9. Gate Charge
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
