STU/D9916L
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
TypC Max
Parameter
Condition
Min
Unit
V
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS b
5
1.3
1
Diode Forward Voltage
V
SD
V
GS = 0V, Is =15A
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
20
15
10
20
V
GS=10~4V
16
12
25 C
Tj=125 C
VGS=3V
-55 C
8
4
0
5
0
VGS=2V
10 12
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1200
2.2
1.8
V
I
GS=10V
=20A
D
1000
800
Ciss
1.4
1.0
600
400
0.6
0.2
0
Coss
200
0
Crss
10
-50 -25
0
25
50
100 125
75
0
5
15
20
25
30
VDS, Drain-to Source Voltage (V)
TJ, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
