STU/D412S
Ver 1.0
30
V =
GS
10V
V = 5V
GS
4.
20
I
D
, Drain Current(A)
24
V =
GS
4V
18
I
D
, Drain Current(A)
V =
GS
5V
16
12
12
V = 5V
GS
3.
6
8
Tj=
125C
4
0
-55C
25C
0
0
0. 5
1
1. 5
2
2. 5
3
0
0. 7
1. 4
2. 1
2. 8
3. 5
4. 2
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
60
50
Figure 2. Transfer Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.0
V
G S
=4.5V
I
D
=9A
V
G S
=10V
I
D
=11A
R
DS(on)
(m
Ω
)
40
V = 5V
GS
4.
30
20
V =
GS
10V
10
1
1
R
DS(on)
, On-Resistance
Normalized
6
12
18
24
30
0
25
50
75
100
125
150
T j (
°C )
I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.3
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.15
I
D
=
250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100
125
150
Vth, Normalized
Gate-Source Threshold Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
V =
GS
DS
V
I
D
=
250uA
100
125
150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
3
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,07,2008
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
