STU/D412S
Ver 1.0
ELECTRICAL CHARACTERISTICS
(
T
C
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
V
DS
=32V , V
GS
=0V
Min
40
Typ
Max
Units
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body leakage current
I
GSS
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
a
V
GS
= ±20V , V
DS
=0V
1
±10
3
26
40
A
uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=11A
V
GS
=4.5V , I
D
=9A
V
DS
=10V , I
D
=11A
1
1.8
21
30
15
470
91
53
8
12
18
19
7.6
4
1.4
2.2
V
m ohm
m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
DYNAMIC CHARACTERISTICS
b
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On DelayTime
tr
Rise Time
t
D(OFF)
Turn-Off DelayTime
tf
Fall Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
b
V
DS
=20V,V
GS
=0V
f=1.0MHz
V
DD
=20V
I
D
=1A
V
GS
=10V
R
GEN
=6 ohm
V
DS
=20V,I
D
=11A,V
GS
=10V
V
DS
=20V,I
D
=11A,V
GS
=4.5V
V
DS
=20V,I
D
=11A,
V
GS
=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
I
S
Diode Forward Voltage
V
SD
V
GS
=0V,I
S
=2.0A
0.79
2.0
1.3
A
V
Notes
_
a.Surface Mounted on FR4 Board,t<10 sec.
_
_ 300us, Duty Ctcle < 2%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting T
J
=25
°
C,L=0.5mH,R
G
=25
Ω
,V
DD
=20V,V
GS
=10V .(See Figure13)
Aug,07,2008
2
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
