S T U312D
N-Channel ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
C
IS S
C
OS S
C
RSS
Rg
b
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 24V, V
GS
= 0V
V
GS
= 24V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10V, I
D
= 10A
V
GS
=4.5V, I
D
= 8A
V
DS
= 5V, V
GS
= 4.5V
V
DS
= 10V, I
D
= 10A
Min Typ
C
Max Unit
30
1
V
uA
100 uA
1
1.8
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
a
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
3
24
36
V
m ohm
m ohm
18
24
20
15
640
180
110
0.5
13
12
40
7
13
6.8
1.5
3.5
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
b
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
Gate resistance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
V
DD
= 15V
I
D
= 1 A
V
GS
= 10V
R
GE N
= 6 ohm
V
DS
=15V, I
D
=20A,V
GS
=10V
V
DS
=15V, I
D
=20A,V
GS
=4.5V
Gate-S ource Charge
Gate-Drain Charge
Q
gs
Q
gd
V
DS
=15V, I
D
= 20 A
V
GS
=10V
2
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
ns
ns
ns
ns
nC
nC
nC
nC
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
