S T U312D
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=-250uA
1.15
I
D
=-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
120
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
I
D
=-6A
-Is , S ource-drain current (A)
100
10.0
R
DS (on)
(m
Ω
)
80
125 C
60
40
25 C
20
0
75 C
25 C
75 C
125 C
1.0
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
1.4
-V
G S
, G ate- S ource Voltage (V )
-V
S D
, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
8
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
