S T U312D
-V
G S
, G ate to S ource V oltage (V )
1200
1000
10
8
6
4
2
0
V
DS
=-15V
I
D
=-6A
C is s
C , C apacitance (pF )
800
600
400
C os s
200
C rs s
0
0
5
10
15
20
25
30
6
0
2
4
6
8
10
12
14 16
-V
DS
, Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 10. C apacitance
300
Tr
F igure 11. G ate C harge
70
-I
D
, Drain C urrent (A)
S witching T ime (ns )
(O N
)L
100
60
10
T D(on)
Tf
im i
t
T D(off)
50
10
0
1 s
ms
10
10
R
D
ms
S
DC
1
1
V DS =15V ,ID=1A
V G S =10V
1
0.03
V
G S
=-10V
S ingle P ulse
T c=25 C
0.1
1
10
30
60
6 10
60 100 300 600
R g, G ate R es is tance (
Ω
)
-V
DS
, Drain-S ource V oltage (V )
F igure 12.s witching characteris tics
2
F igure 13. Maximum S afe
O perating Area
r(t),Normalized E ffective
T ransient T hermal Impedance
1
D=0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
S ING LE P ULS E
0.01
10
-5
-4
-3
-2
-1
t
1
t
2
1.
2.
3.
4.
10
10
10
R
J A
(t)=r (t) * R
J A
R
J A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
J A
(t)
Duty C ycle, D=t
1
/t
2
1
10
10
S quare Wave P uls e Duration (s ec)
F igure 14. Normalized T hermal T rans ient Impedance C urve
9
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
