STS3401A
Ver 1.0
15
V
GS
= -10V
V
GS
= -4V
V
GS
= -4.5V
V
GS
= -3.5V
10
-55 C
-I
D
, Drain Current(A)
-I
D
, Drain Current(A)
12
8
25 C
Tj=125 C
9
6
6
V
GS
= -3V
4
3
V
GS
= -2.5V
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage(V)
-V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
180
150
120
90
60
30
1
V
GS
= -10V
Figure 2. Transfer Characteristics
1.5
1.4
1.3
1.2
1.1
1.0
0
V
GS
= -4.5V
I
D
= -1.3A
V
GS
= -10V
I
D
= -1.6A
R
DS(on)
(m
Ω
)
V
GS
= -4.5V
1
3
6
9
12
15
R
DS(on)
, On-Resistance
Normalized
0
25
50
75
100
125
-I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
15 0
T j (
°C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75 100 125 150
V
DS
= V
GS
I
D
= -250uA
1.15
I
D
= -250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jun,29,2011
3
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
