STS3401A
Ver 1.0
ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
V
DS
=-24V , V
GS
=0V
Min
-30
Typ
Max
Units
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
c
V
GS
= ±20V , V
DS
=0V
-1
±100
uA
nA
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-10V , I
D
=-1.6A
V
GS
=-4.5V , I
D
=-1.3A
V
DS
=-5V , I
D
=-1.6A
-1.0
-1.6
63
94
6
-3.0
79
127
V
m ohm
m ohm
S
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
tr
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
V
DS
=-15V,V
GS
=0V
f=1.0MHz
345
85
69
pF
pF
pF
V
DD
=-15V
I
D
=-1A
V
GS
=-10V
R
GEN
= 6 ohm
V
DS
=-15V,I
D
=-1.6A,V
GS
=-10V
V
DS
=-15V,I
D
=-1.6A,V
GS
=-4.5V
V
DS
=-15V,I
D
=-1.6A,
V
GS
=-10V
7.2
12.5
7.5
9
8.6
4.5
0.55
2.5
ns
ns
ns
ns
nC
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
Diode Forward Voltage
V
GS
=0V,I
S
=-1.6A
-0.84
-1.2
V
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Jun,29,2011
2
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
