S T S 2621
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125
V
DS
=V
G S
I
D
=-250uA
1.15
I
D
=-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
with T emperature
9
F igure 6. B reakdown V oltage V ariation
with T emperature
20
g
F S
, T rans conductance (S )
6
4.5
3
1.5
0
0
3
6
9
V
DS
=-5V
12
15
-Is , S ource-drain current (A)
7.5
10
1
0
0.4
0.8
1.2
1.6
T
J
=25 C
2.0
2.4
-I
DS
, Drain-S ource C urrent (A)
-V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
-V
G S
, G ate to S ource V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
13
5
-I
D
, Drain C urrent (A)
4
3
2
1
0
0
V
DS
=-4.5V
I
D
=-2.0A
10
R
D
S
(O
L
N)
im
it
10
10
0m
s
ms
11
DC
1s
0.1
0.03
V
G S
=-4.5V
S ingle P ulse
T c=25 C
0.1
1
10
20
50
0.5
1
1.5
2
2.5
3
3.5
4
Qg, T otal G ate C harge (nC )
-V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
F igure 10. Maximum S afe
O perating Area
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
