S T S 2621
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
C
IS S
C
OS S
C
RSS
c
S ymbol
Condition
V
GS
= 0V, I
D
= -250uA
V
DS
= -16V, V
GS
= 0V
V
GS
= 10V, V
DS
= 0V
V
DS
= V
GS
, I
D
=-250uA
V
GS
= -4.5V, I
D
= -2.0A
V
GS
= -2.5V, I
D
= -1.0A
V
DS
= -5V, V
GS
= -4.5V
V
DS
= -5V, I
D
= -2A
Min Typ
C
Max Unit
-20
1
100
-0.5 -0.8 -1.5
115
175
-5
6
295
63
52
130
190
V
uA
nA
V
m-ohm
m-ohm
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
V
DS
= -20V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= -10V,
I
D
= -1A,
V
GS
= -4.5V,
R
GE N
= 6
ohm
11.5
15.6
83.1
43.6
3.5
ns
ns
ns
ns
nC
nC
nC
V
DS
= -10V, I
D
= -2A,
V
GS
= -4.5V
0.9
1.1
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
