STB/P8444
Ver 1.0
12
20.0
I
D
=80 A
Is, Source-drain current (A)
10
10.0
R
DS(on)
(m
W
)
8
6
4
75 C
2
0
25 C
125 C
125
125 C
25 C
75 C
0
2
4
6
8
10
1.0
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
, Gate-Sorce Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
9000
7500
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
GS
, Gate to Source Voltage (V)
C, Capacitance (pF)
Cis s
8
6
4
2
0
V
DS
= 20V
I
D
= 25A
6000
4500
3000
1500
0
0
C rs s
5
10
15
20
25
30
Cos s
0
20
40
60
80 100 120 140 160
V
DS
, Drain-to Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
2200
Tr
1000
it
10
1m
10
DC
m
s
s
Switching Time (ns)
I
D
, Drain Current (A)
1000
600
100
TD(off)
100
R
TD(on)
DS
(O
L
N)
im
0u
s
Tf
10
V
G S
=10V
S ingle P ulse
T c=25 C
10
1
V DS =20V ,ID=1A
V G S =10V
6 10
60 100
300 600
1
0.1
1
10
100
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage (V)
Figure 11.switching characteristics
Figure 12. Maximum Safe
Operating Area
Mar,26,2008
4
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