STB/P8444
Ver 1.0
120
20
16
V
G S
=10V
I
D
, Drain Current(A)
I
D
, Drain Current(A)
96
72
V
G S
=6V
V
G S
=5V
12
25 C
8
Tj=125 C
4
-55 C
48
24
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
7
2.0
Figure 2. Transfer Characteristics
5
4
3
2
1
V
G S
=10V
R
DS(ON)
, On-Resistance
Normalized
6
1.8
1.6
1.4
1.2
1.0
0.0
V
G S
=10V
I
D
= 80 A
R
DS(on)
(m
W
)
1
24
48
72
96
120
0
25
50
75
100
125
150
Tj( C)
I
D
, Drain Current (A)
Tj, Junction Temperature ( C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.3
I
D
=250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature ( C)
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Mar,26,2008
3
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