STB/P8444
Ver 1.0
ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
4
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
Drain-Source On-State Resistance
R
DS(ON)
g
FS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
tr
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
c
V
GS
=0V , I
D
=250uA
V
DS
=32V , V
GS
=0V
40
1
±100
uA
nA
V
GS
= ±20V , V
DS
=0V
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=80A
V
DS
=5V , I
D
=80A
2
2.8
3.5
20
4
4.8
V
m ohm
S
V
DS
=20V,V
GS
=0V
f=1.0MHz
6500
940
500
pF
pF
pF
V
DD
=20V
I
D
=1A
V
GS
=10V
R
GEN
=6 ohm
V
DS
=20V,I
D
=25A,V
GS
=10V
V
DS
=20V,I
D
=25A,
V
GS
=10V
185
162
185
50
110
20
26
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
V
SD
V
GS
=0V,I
S
=10A
Diode Forward Voltage
0.8
1.3
V
Notes
a.Maximum wire current carrying capacity is 80A.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
J
=25
°
C,L=0.5mH,R
G
=25
Ω
,I
AS
=35A,V
DD
= 20V.(See Figure13)
Mar,26,2008
2
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
