S TM8500A
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
C
Typ Max
Parameter
Condition
Min
Unit
V
Symbol
b
DRAIN-SOURCE DIODE CHARACTERISTICS
V
V
GS = 0V, Is =1.7A
GS = 0V, Is =-1.7A
N-Ch
P-Ch
0.8
-0.79
1.2
Diode Forward Voltage
V
SD
-1.2
5
Notes
＜
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width＜300μs, Duty Cycle＜2%.
c.Guaranteed by design, not subject to production testing.
d.G uaranteed when external R g=6 ohm and tf < tf max
N-Channel
25
20
15
10
20
VGS=6V
VGS=10V
VGS=5V
VGS=8V
16
12
8
VGS=4.5V
Tj=125 C
25 C
VGS=4V
4
5
0
-55 C
VGS=3V
2.5
0
0
1.0
2.0
3.0
4.0
5.0
6.0
0.5
0
1
1.5
2
3
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.8
1.6
900
V
I
G S =10V
=4.5A
750
600
450
D
Ciss
1.4
1.2
1.0
0.8
0
300
150
0
Coss
Crss
-50
0
50
100
150
-25
25
75
125
0
5
10
15
20
25
30
Tj=( C )
VDS, Drain-to Source Voltage (V)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
