S TM8500A
P-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T
A
= 25 C unles s otherwis e noted)
C
Typ Max
P arameter
C ondition
Min
-55
Unit
S ymbol
5
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D -250uA
=
Drain-S ource Breakdown Voltage
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS -44V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
-1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
V
G S (th)
-1.0
10
V
G ate Threshold Voltage
-1.6
85
-2.5
110
145
V
V
V
V
V
DS =VG S , I
= -250uA
D
m ohm
m ohm
=
=
=
G S
G S
-
-
10V, I
D
-3A
-2A
Drain-S ource On-S tate R esistance
R
DS (ON)
4.5V, I
D
110
=
DS = -5V, VG S = -10V
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
7.8
Forward Transconductance
=
=
-5V, I -3A
DS
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
838
91
705
77
P
P
P
F
F
F
C
IS S
V
DS =-30V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
G ate resistance
54
46
R g
V
G S =0V, VDS = 0V, f=1.0MH
Z
2.5
ohm
c
S WITC HING C HAR AC TE R IS TIC S
Turn-On Delay Time
tD(ON)
ns
ns
ns
6.5
7.7
17
51
21
V
R
V
R
DD = -30V
= 15 ohm
G S = -10V
L
t
r
R ise Time
14.3
tD(OFF)
Turn-Off Delay Time
Fall Time
43.2
17.7
G E N = 6 ohm
tf
ns
Total G ate C harge
V
V
DS =-30V, I
D
=-3A,VGS =-10V
=-3A,VGS =-4.5V
nC
nC
Q
g
15.7
13.2
6.5
DS =-30V, I
D
7.7
2.4
3
nC
nC
Q
Q
gs
G ate-S ource C harge
G ate-Drain C harge
1.98
2.5
V
V
DS =-30V, I
G S =-4.5V
D
= -3 A
gd
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
