S TM8500A
N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T
A
= 25 C unles s otherwis e noted)
C
Typ Max
P arameter
C ondition
Min
55
Unit
S ymbol
5
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS 44V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
V
G S (th)
1.0
15
3.0
60
95
V
G ate Threshold Voltage
2.0
40
75
V
V
V
V
V
DS =VG S , I
= 250uA
D
m ohm
m ohm
=
=
G S 10V, I
G S =4.5V, I
DS = 5V, VG S = 10V
D
4.5A
Drain-S ource On-S tate R esistance
R
DS (ON)
D
= 4A
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
9
Forward Transconductance
=
=
5V, I 4.5A
DS
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
645
P
P
P
F
F
F
C
IS S
767
90
V
DS =25V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
77
45
2
f =1.0MH
Z
R everse Transfer C apacitance
G ate resistance
53
R g
V
G S =0V, VDS = 0V, f=1.0MH
Z
ohm
c
S WITC HING C HAR AC TE R IS TIC S
Turn-On Delay Time
t
D(ON)
ns
ns
ns
5.5
6.5
13
V
DD = 30V
= 1 A
G S = 10V
G E N = 6 ohm
I
D
tr
R ise Time
9.4
11.7
4.4
V
R
tD(OFF)
Turn-Off Delay Time
Fall Time
13.8
5.1
14
tf
ns
Total G ate C harge
V
V
DS =30V, I
DS =30V, I
D
=4.5A,VGS =10V
=4.5A,VGS =4.5V
Q
g
11.9
6.2
nC
7.3
D
nC
nC
nC
Q
Q
gs
G ate-S ource C harge
G ate-Drain C harge
2.6
3
3
V
V
DS =30V, I
G S =4.5V
D
= 4.5 A
gd
3.5
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
