S TM8303
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
C
Typ Max
Parameter
Condition
Min
Unit
V
Symbol
b
DRAIN-SOURCE DIODE CHARACTERISTICS
V
V
GS = 0V, Is =1.7A
GS = 0V, Is =-1.7A
N-Ch
P-Ch
0.8
-0.78
1.2
Diode Forward Voltage
V
SD
-1.2
5
Notes
＜
a.Surface Mounted on FR4 Board, t 10sec.
* R JA is 62.5 C/W when mounted on 1in2 FR-4 board with 2oz Copper
* R JA is 125 C/W when mounted on 0.02 in2 FR-4 board with 2oz Copper
b.Pulse Test:Pulse Width＜300μs, Duty Cycle＜2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
25
20
15
10
20
VGS=4V
16
12
8
25 C
VGS=10,8,5V
VGS=3V
-55 C
4
Tj=125 C
1.6
5
0
0
0
0.8
2.4
3.2
4.0
4.8
1
5
0
2
3
4
6
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.8
1200
V
G S =10V
=6A
1000
800
I
D
1.4
600
1.0
0.8
0.4
0
Ciss
400
200
0
Coss
Crss
-50
0
50
100
150
-25
25
75
125
0
5
10
15
20
25
30
Tj=( C )
VDS, Drain-to Source Voltage (V)
T j, J unction T emperature ( C )
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
