S T M8303
P -C hannel
5
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=-250
uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
I
D
=-250uA
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
15
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
g
F S
, T rans conductance (S )
-Is , S ource-drain current (A)
20
12
9
6
3
0
0
5
10
V
DS
=-5V
15
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
-I
DS
, Drain-S ource C urrent (A)
-V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
7
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
