S TM8303
N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T
A
= 25 C unles s otherwis e noted)
C
Typ Max
P arameter
C ondition
Min
30
Unit
S ymbol
5
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS 24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
3
V
G S (th)
1
1.4
25
39
V
G ate Threshold Voltage
V
DS =VG S , I
= 250uA
D
32
m ohm
m ohm
=
=
V
V
V
V
G S 10V, I
D
6A
Drain-S ource On-S tate R esistance
R
DS (ON)
48
G S =4.5V, I
D
= 4A
20
DS = 10V, VG S = 10V
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
Forward Transconductance
=
=
6A
8
DS
10V, I
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
511
110
76
P
P
P
F
F
F
C
IS S
V
DS =15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S c
5
Turn-On Delay Time
t
D(ON)
ns
ns
V
DD = 15V,
= 1A,
G S = 10V,
G E N = 6 ohm
I
D
9.1
R ise Time
tr
V
R
Turn-Off Delay Time
Fall Time
tD(OFF)
13.9
5
ns
ns
nC
tf
11.5
V
V
DS =15V, I
D
D
=6A,VG S =10V
=6A,VG S =4.5V
Q
g
Total G ate C harge
DS =15V, I
nC
nC
nC
6.1
1.4
3.1
G ate-S ource C harge
G ate-Drain C harge
Q
Q
gs
V
V
DS =10V, I
G S =10V
D
= 6A,
gd
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
