S TM6610
1.15
1.10
1.2
1.1
1.0
VDS =VG S
ID=250uA
ID=250uA
1.05
1.00
0.9
0.8
0.7
0.95
0.90
0.85
0.6
0.5
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C )
Tj, Junction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. G ate Threshold Variation
with Temperature
48
20.0
10.0
ID=8A
40
32
125 C
24
25 C
16
125 C
75 C
25 C
75 C
8
0
1.0
0.2
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
VGS , Gate-S ource Voltage (V)
V
S D, Body Diode Forward Voltage (V)
Figure 7. On-R esistance vs.
Gate-S ource Voltage
Figure 8. Body Diode Forward Voltage
Variation with S ource C urrent
4