S T M6610
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
b
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
0.8
1.2
V
C
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
Notes
a.Surface Mounted on FR4 Board,t 10sec.
b.Pulse Test:Pulse Width 300 s,Duty Cycle 2%.
c.Guaranteed by design,not subject to production testing.
5
45
V
GS
=10V
36
V
GS
=4.5V
20
16
I
D
, Drain Current(A)
I
D
, Drain Current (A)
V
GS
=4V
27
V
GS
=3.5V
12
Tj=125 C
8
25 C
4
0
-55 C
18
V
GS
=3V
9
V
GS
=2.5V
0
0
0.5
1
1.5
2
2.5
3
0
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
42
1.5
Figure 2. Transfer Characteristics
R
DS (ON)
, On-R es is tance
Normalized
35
1.4
1.3
1.2
1.1
1.0
0
V
G S
=4.5V
I
D
=5A
V
G S
=10V
I
D
=8A
R
DS (on)
(m
Ω
)
28
V
G S
=4.5V
21
14
7
1
1
V
G S
=10V
9
18
27
36
45
0
25
50
75
100
125
150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
