S TM6610
E LE C TR IC AL C HAR AC TE R IS TIC S (T
A
25 C unless otherwise noted)
=
Typ C Max
Parameter
Condition
Min
Unit
S ymbol
5
OFF CHAR ACTE R IS TICS
VGS 0V, ID 250uA
Drain-S ource Breakdown Voltage
=
30
V
BVDS S
IDS S
=
uA
uA
VDS 24V, VGS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
1
=
=
VGS
20V, VDS 0V
=
IGS S
10
=
b
ON CHAR ACTE R IS TICS
3
1.8
15
20
VGS (th)
1.0
20
V
Gate Threshold Voltage
VDS =VGS , ID = 250uA
m ohm
m ohm
19
28
=
=
VGS 10V, ID 8A
Drain-S ource On-S tate R esistance
R DS (ON)
VGS =4.5V, ID =5A
VDS = 15V, VGS = 10V
On-S tate Drain Current
ID(ON)
gFS
A
S
15
Forward Transconductance
= 10V, ID =8A
VDS
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
620
180
110
PF
PF
PF
CIS S
COS S
CR S S
VDS =15V, VGS = 0V
f =1.0MHZ
Output Capacitance
R everse Transfer Capacitance
S WITCHING CHAR ACTE R IS TICS c
VDD = 15V,
ID = 7A,
12
Turn-On Delay Time
tD(ON)
ns
ns
R ise Time
tr
tD(OFF)
tf
15.5
42
8
R L=2.1 ohm,
VGS = 10V,
R GEN = 6 ohm
Turn-Off Delay Time
Fall Time
ns
ns
nC
VDS =15V, ID =8A,VGS =10V
VDS =15V, ID =8A,VGS =4.5V
12.5
6.5
Qg
Total Gate Charge
nC
nC
nC
Gate-S ource Charge
Gate-Drain Charge
Qgs
Qgd
1.4
3.5
VDS =15V, ID = 8A,
VGS =10V
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
