S T M4963
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =-1.7A
Min Typ
C
Max Unit
5
-0.78 -1.3
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
25
-V
G S
=2.5V
20
16
-V
G S
=10,9,8,7,6,5,4V
15
20
-55 C
25 C
T j=125 C
12
-I
D
, Drain C urrent (A)
-I
D
, Drain C urrent (A)
10
-V
G S
=1.5V
5
0
8
4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1
1.5
2
2.5
3
-V
DS
, Drain-to-S ource Voltage (V )
-V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
R
DS (ON)
, On-R es is tance(Ohms )
(Normalized)
2500
2000
1.8
1.6
1.4
1.2
1.0
0.8
F igure 2. Trans fer C haracteris tics
V
G S
=-10V
I
D
=-5.8A
C , C apacitance (pF )
1500
1000
C is s
500
200
0
C os s
C rs s
0
5
10
15
20
25
30
0.6
-50
0
25
50
100
150
-V
DS
, Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
