S TM4953
1.15
1.10
1.3
ID=-250uA
V
DS =V G S
=-250uA
1.2
1.1
1.0
0.9
I
D
1.05
1.00
0.95
0.90
0.85
0.8
0.7
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
15
20.0
V
G S =0V
10.0
12
9
6
3
V
DS =-15V
20
0
1.0
0
5
10
15
0.4
0.6
0.8
1.0
1.2
1.4
-IDS , Drain-S ource C urrent (A)
-V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
10
V
DS =-15V
t
i
m
8
6
4
i
I
D=-4.6A
10
1
L
)
N
O
(
R DS
1
0
m
s
1
s
0
0
m
s
1
D
C
0.1
V
G S =-10V
S ingle P ulse
=25 C
2
0
T
A
0.03
0.1
1
10
50
0
2
4
6
8
10
12
14 16
Qg, T otal G ate C harge (nC )
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
F igure 9. G ate C harge
Operating Area
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
