S TM4953
E LE C T R IC AL C HAR AC T E R IS T IC S (T
A
25 C unless otherwise noted)
=
Typ C Max
P arameter
C ondition
Min
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D -250uA
=
Drain-S ource Breakdown Voltage
-30
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS -24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
-1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
V
G S (th)
-1
-1.5 -2.5
V
G ate Threshold Voltage
V
DS =VG S , I
D
= -250uA
-4.6A
m-ohm
=
V
V
V
V
GS -10V, I
D
45
75
55
85
=
Drain-S ource On-S tate R esistance
R
DS (ON)
m-ohm
GS =-4.5V, I
D
= -3.6A
-20
3
DS = -5V, VG S = -10V
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
Forward Transconductance
=
DS -15V, I - 4.6A
=
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
550
P
P
P
F
F
F
C
IS S
V
DS =-15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
129
89
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S c
11.1
Turn-On Delay Time
t
D(ON)
ns
ns
ns
ns
nC
V
R
D
L
= -15V,
=15 ohm
R ise Time
tr
12.5
55.7
33.5
I
D
= -1A,
G E N = -10V,
G E N =6 ohm
Turn-Off Delay Time
Fall Time
tD(OFF)
V
R
tf
V
V
DS =-15V,I
D
D
=-4.6A,VG S =-10V
=-4.6A,VGS =-4.5V
12.7
8.1
Q
g
Total G ate C harge
DS =-15V,I
nC
nC
nC
G ate-S ource C harge
G ate-Drain C harge
Q
Q
gs
2.4
V
V
DS =-15V, I
G S =-10V
D
= -4.6A,
gd
2.5
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
