S TM4953
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
C
Typ Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
Diode F orward Voltage
V
S D
V
G S = 0V, Is =-1.7A
-1.2
-0.8
Notes
a.S urface Mounted on FR 4 Board, t<= 10sec.
b.P ulse Test:P ulse Width<= 300us, Duty C ycle<= 2%.
c.G uaranteed by design, not subject to production testing.
25
20
16
12
8
-55 C
Tj=125 C
-VG S =5V
-VG S =4V
20
15
-VG S =3V
25 C
-VG S =10,9,8,7,6V
10
5
-VG S =2.5V
-VG S =1.5V
4
0
0
0
0.5
1
1.5
2
2.5
3
0
3
6
9
12
15
18
-VG S , G ate-to-S ource Voltage (V)
-VDS , Drain-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
1.8
1.6
1.4
1.2
1200
1000
800
VG S =-10V
ID=-4.6A
600
400
C iss
1.0
0.8
200
0
C oss
C rss
0.6
-50
0
50
100
150
0
5
10
15
20
25
30
T j, J unction T emperature ( C )
-VDS , Drain-to S ource Voltage (V)
Figure 4. On-R esistance Variation with
Temperature
Figure 3. C apacitance
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
