S TM4952
1.15
1.10
1.4
V
DS =V G S
ID=-250uA
1.2
ID=-250uA
1.05
1.00
1.0
0.8
5
0.95
0.90
0.85
0.6
0.4
0.2
-50 -25
0
25
50
100 125
75
-50 -25
0
25
50
100 125
75
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
15
12
9
20.0
V
G S =0V
10.0
6
3
V
DS =-15V
15
1.0
0
0
5
10
20
0.4
0.6
0.7
0.9
1.1
1.3
-IDS , Drain-S ource C urrent (A)
-V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
5
40
t
i
V
DS =-4.5V
m
i
L
)
N
4
3
2
1
10
1
O
0
(
I
D=-1A
m
R DS
s
1
1
0
s
0
m
s
D
C
0.1
V
G S =-4.5V
S ingle P ulse
=25 C
1
0
T
A
0.03
0.1
1
10
20 30
8
0
2
4
6
10
12 14 16
Qg, T otal G ate C harge (nC )
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
